JPH029549Y2 - - Google Patents
Info
- Publication number
- JPH029549Y2 JPH029549Y2 JP1982094245U JP9424582U JPH029549Y2 JP H029549 Y2 JPH029549 Y2 JP H029549Y2 JP 1982094245 U JP1982094245 U JP 1982094245U JP 9424582 U JP9424582 U JP 9424582U JP H029549 Y2 JPH029549 Y2 JP H029549Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- convex curved
- plasma cvd
- curved surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9424582U JPS58196838U (ja) | 1982-06-23 | 1982-06-23 | プラズマcvd装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9424582U JPS58196838U (ja) | 1982-06-23 | 1982-06-23 | プラズマcvd装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58196838U JPS58196838U (ja) | 1983-12-27 |
JPH029549Y2 true JPH029549Y2 (en]) | 1990-03-09 |
Family
ID=30225682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9424582U Granted JPS58196838U (ja) | 1982-06-23 | 1982-06-23 | プラズマcvd装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58196838U (en]) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5817646B2 (ja) * | 2012-05-29 | 2015-11-18 | 株式会社島津製作所 | サンプルホルダ |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55115336A (en) * | 1979-02-26 | 1980-09-05 | Anelva Corp | Plasma cvd electrode |
-
1982
- 1982-06-23 JP JP9424582U patent/JPS58196838U/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58196838U (ja) | 1983-12-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0428791B2 (en]) | ||
JPS62103372A (ja) | プラズマを使用した化学蒸気堆積による薄膜形成方法および装置 | |
TW307027B (en) | Process for reducing circuit damage during pecvd in single wafer pecvd system | |
JPH029549Y2 (en]) | ||
JPS5772321A (en) | Manufacture of seiconductor device | |
JPH02268430A (ja) | プラズマ処理装置 | |
JPS62189725A (ja) | プラズマcvd装置 | |
JPH02290984A (ja) | プラズマ装置 | |
JPS59172716A (ja) | 半導体製造方法 | |
JPS6248759B2 (en]) | ||
JPS603128A (ja) | プラズマ酸化装置 | |
JPS58171822A (ja) | ドライエツチング方法 | |
JPH01238120A (ja) | エッチング装置 | |
JPS62219912A (ja) | プラズマcvd装置 | |
JPS619577A (ja) | プラズマ化学気相成長法 | |
JPS63312962A (ja) | スパッタ装置 | |
JPS62224029A (ja) | 半導体製造装置 | |
JPS5810830A (ja) | ドライエツチング装置 | |
JPS583635A (ja) | プラズマ中化学気相成長装置 | |
JPH0451473Y2 (en]) | ||
JP2797351B2 (ja) | 半導体集積回路の製造方法 | |
JPH03129821A (ja) | 半導体装置の製造方法 | |
JPS6248022A (ja) | 半導体基板エツチング装置 | |
JPS62150829A (ja) | 半導体装置の製造方法 | |
JPH0267726A (ja) | 半導体装置の製造方法 |